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| 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4026 Switching Regulator Applications Unit: mm MAX Features * * * * Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) MAX Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 1 2 20 56 1 2 150 -55 to 150 Unit V V V A W mJ A mJ C C MAX 1 MAX JEDEC JEITA TOSHIBA 2-7J2B Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C, L = 100 mH, IAR = 1 A, RG = 25 Note 3: Repetitive rating; pulse width limited by max channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK4026 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 1 A - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V ID = 0.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 30 600 2.0 0.4 Typ. 6.4 0.85 190 15 55 12 55 40 90 9 3.5 5.5 Max 10 100 4.0 9.0 pF Unit A V A V V S 50 RL = 600 ns VGS 0V VDD 300 V - nC Duty < 1%, tw = 10 s = Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 400 1.4 Max 1 2 -1.7 Unit A A V ns C Marking K4026 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK4026 ID - VDS 1.0 Common source 0.8 Tc = 25C Pulse test 8 10 6 2.0 5 1.6 10 ID - VDS 6 8 5.5 5.25 1.2 Common source Tc = 25C Pulse test Drain current ID (A) 0.6 4.5 0.4 4.25 0.2 4 VGS = 3.75 V 0 0 2 4 6 8 10 Drain current ID (A) 4.75 5 0.8 4.75 4.5 0.4 4.25 VGS = 4 V 10 20 30 40 50 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 2.0 Tc = -55C 1.6 25 20 VDS - VGS Common source VDS (V) 16 Tc = 25C Pulse test Drain current ID (A) 100 1.2 Drain-source voltage 12 0.8 8 ID = 1 A 0.4 Common source VDS = 20 V Pulse test 4 0.5 0.25 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 3 30 RDS (ON) - ID Forward transfer admittance Yfs (S) Tc = -55C 1 25 100 Drain-source ON-resistance RDS (ON) () 10 VGS = 10 V 0.5 0.3 Common source VDS = 20 V Pulse test 0.1 0.03 0.05 0.1 0.3 0.5 1 3 5 3 Common source Tc = 25C Pulse test 1 0.03 0.05 0.1 0.3 0.5 1 3 Drain current ID (A) Drain current ID (A) 3 2006-11-08 2SK4026 RDS (ON) - Tc () 20 Common source 16 VGS = 10 V Pulse test ID = 1 A 10 5 Common source Tc = 25C Pulse test IDR - VDS Drain-source ON-resistance RDS (ON) 0.5 Drain reverse current IDR (A) 3 0.25 12 1 0.5 0.3 8 0.1 0.05 0.03 10 3 1 -0.6 VGS = 0 V, -1 V -0.8 -1.0 -1.2 4 0 -80 -40 0 40 80 120 160 0.01 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 500 300 Ciss 5 Vth - Tc Vth (V) Gate threshold voltage 4 (pF) 100 50 30 Coss 10 5 Common source 3 VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 0.3 0.5 1 3 5 10 30 50 100 Crss Capacitance C 3 2 Common source 1 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 500 Dynamic input/output characteristics 20 Common source Drain power dissipation PD (W) VDS (V) 40 400 Tc = 25C 100 Pulse test 16 Drain-source voltage 200 200 VDD = 400 V 20 8 10 100 VGS 4 0 0 40 80 120 160 200 0 0 4 8 12 16 0 20 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-08 Gate-source voltage 30 300 12 VGS (V) VDS ID = 1 A 2SK4026 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Duty = t/T Rth (ch-c) = 6.25C/W 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Single pulse Pulse width tw (s) Safe operating area 10 100 EAS - Tch Avalanche energy EAS (mJ) ID max (pulsed) * 80 (A) 1 ID max (continuous) 100 s * 1 ms * 60 Drain current ID DC Tc = 25C 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 VDSS max 10 100 1000 40 20 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform Test circuit RG = 25 VDD = 90 V, L = 100 mH E AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2006-11-08 2SK4026 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08 |
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